ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF 有权
    有机发光二极管显示及其制造方法

    公开(公告)号:US20160233285A1

    公开(公告)日:2016-08-11

    申请号:US14849986

    申请日:2015-09-10

    Inventor: Won Kyu LEE

    Abstract: An organic light emitting diode display includes a substrate, switching elements on the substrate, at least one barrier member on the substrate, a passivation layer covering the switching elements and including a protection opening exposing the barrier member, pixel electrodes on the passivation layer and connected to the switching elements, auxiliary electrodes separated from and formed from a same layer as the pixel electrodes, an organic emission layer including a pixel emission layer and a common emission layer sequentially formed on the pixel electrodes, and a common electrode including an auxiliary common electrode and a main common electrode sequentially formed on the common emission layer. The common emission layer and the auxiliary common electrode have a common contact hole at a position corresponding to a position of the barrier member. The main common electrode is connected with the auxiliary electrode through the common contact hole.

    Abstract translation: 有机发光二极管显示器包括基板,基板上的开关元件,基板上的至少一个阻挡元件,覆盖开关元件的钝化层,并且包括暴露阻挡元件的保护开口,钝化层上的像素电极并连接 开关元件,与像素电极相同层分离并形成的辅助电极,包括依次形成在像素电极上的像素发射层和共同发射层的有机发射层,以及包括辅助公共电极的公共电极 以及顺序地形成在公共发射层上的主公共电极。 公共发射层和辅助公共电极在对应于阻挡构件的位置的位置具有共同的接触孔。 主要公共电极通过公共接触孔与辅助电极连接。

    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    2.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    有机发光二极管显示器及其制造方法

    公开(公告)号:US20160035814A1

    公开(公告)日:2016-02-04

    申请号:US14679350

    申请日:2015-04-06

    CPC classification number: H01L29/78696 H01L27/1222 H01L27/1288

    Abstract: An organic light emitting device includes a switching transistor and a driving transistor. A semiconductor layer is commonly used by the switching and driving transistors. The portion of semiconductor layer corresponding to the driving transistor is curved. A gate insulating layer is located between a channel region and gate electrode of the switching transistor, and between the channel region and the gate electrode of the driving transistor. The gate insulating layer has substantially a same plane shape as the switching gate electrode and the driving gate electrode. An edge of the gate insulating layer and an edge of the switching and driving gate electrodes at least partially overlap.

    Abstract translation: 有机发光器件包括开关晶体管和驱动晶体管。 半导体层通常由开关和驱动晶体管使用。 对应于驱动晶体管的半导体层的部分是弯曲的。 栅极绝缘层位于开关晶体管的沟道区域和栅电极之间,并且位于沟道区域和驱动晶体管的栅电极之间。 栅极绝缘层具有与开关栅电极和驱动栅电极基本相同的平面形状。 栅极绝缘层的边缘和开关和驱动栅电极的边缘至少部分重叠。

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