公开(公告)号：US09502442B2

公开(公告)日：2016-11-22

申请号：US14513476

申请日：2014-10-14

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong-Duck Song ,  Jong-Hyun Choi ,  Jun-Seon Seo

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L27/1255 ,  H01L29/4908 ,  H01L29/4958 ,  H01L29/66757 ,  H01L29/78666

Abstract: A thin film transistor array substrate and a method of manufacturing the thin film transistor array substrate are provided. The thin film transistor array substrate may include: a substrate; a thin film transistor (TFT) including an active layer, a gate electrode, a source electrode, and a drain electrode on the substrate. The gate electrode may include a bottom gate electrode and a top gate electrode that covers upper and lateral surfaces of the bottom gate electrode.

Abstract translation: 提供薄膜晶体管阵列基板和制造薄膜晶体管阵列基板的方法。 薄膜晶体管阵列基板可以包括：基板; 在基板上包括有源层，栅电极，源电极和漏电极的薄膜晶体管（TFT）。 栅电极可以包括底栅电极和覆盖底栅电极的上表面和侧表面的顶栅电极。