公开(公告)号：US09899593B2

公开(公告)日：2018-02-20

申请号：US13686005

申请日：2012-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jea Shik Shin ,  Duck Hwan Kim ,  Chul Soo Kim ,  Ho Soo Park ,  Sang Uk Son ,  In Sang Song ,  Moon Chul Lee ,  Cui Jing

IPC: H01L41/107 ,  H03H9/17 ,  H03H9/02

CPC classification number: H01L41/107 ,  H03H9/02102 ,  H03H9/0211 ,  H03H9/173 ,  H03H9/174 ,  H03H9/175

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.

公开(公告)号：US10991872B2

公开(公告)日：2021-04-27

申请号：US15827040

申请日：2017-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jea Shik Shin ,  Duck Hwan Kim ,  Chul Soo Kim ,  Ho Soo Park ,  Sang Uk Son ,  In Sang Song ,  Moon Chul Lee ,  Cui Jing

IPC: H01L41/107 ,  H03H9/17 ,  H03H9/02

Abstract: Provided is a bulk acoustic wave resonator (BAWR). The BAWR may include an air cavity disposed on a substrate, a bulk acoustic wave resonant unit including a piezoelectric layer, and a reflective layer to reflect a wave of a resonant frequency that is generated from the piezoelectric layer.