公开(公告)号：US12261208B2

公开(公告)日：2025-03-25

申请号：US18538575

申请日：2023-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Park ,  Myunggil Kang ,  Uihui Kwon ,  Seungkyu Kim ,  Ahyoung Kim ,  Youngseok Song

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

公开(公告)号：US11888039B2

公开(公告)日：2024-01-30

申请号：US17352973

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Park ,  Myunggil Kang ,  Uihui Kwon ,  Seungkyu Kim ,  Ahyoung Kim ,  Youngseok Song

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088

CPC classification number: H01L29/41775 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696

Abstract: An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.