公开(公告)号：US09753771B2

公开(公告)日：2017-09-05

申请号：US14721517

申请日：2015-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyeongtaek Lee ,  Seungkyu Kim ,  Jieun Park ,  WonJoon Jang

IPC: G06F9/48 ,  G06F9/50

CPC classification number: G06F9/4881 ,  G06F9/4856 ,  G06F9/5027 ,  G06F9/5033 ,  G06F9/5094 ,  Y02D10/22 ,  Y02D10/24 ,  Y02D10/32

Abstract: A scheduling method of a system-on-chip including a multi-core processor includes detecting a scheduling request of a thread to be executed in the multi-core processor, and detecting a calling thread having the same context as the scheduling-requested thread among threads that are being executed in the multi-core processor. The method includes reassigning or resetting the scheduling-requested thread according to performance of a core to execute the calling thread having the same context.

公开(公告)号：US12261208B2

公开(公告)日：2025-03-25

申请号：US18538575

申请日：2023-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Park ,  Myunggil Kang ,  Uihui Kwon ,  Seungkyu Kim ,  Ahyoung Kim ,  Youngseok Song

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786

Abstract: An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.

公开(公告)号：US10741904B2

公开(公告)日：2020-08-11

申请号：US15433343

申请日：2017-02-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungkyu Kim ,  Hyunjong Oh ,  Chulhyung Yang ,  Jiwoo Lee

IPC: H01Q1/22 ,  H01Q5/307 ,  H01Q1/24 ,  H01Q5/371 ,  H01Q5/35 ,  H01Q1/38 ,  H01Q1/48 ,  H04W84/12

Abstract: An electronic device is provided, including a housing, a side member, a display, a printed circuit board (PCB), and a communication device. The housing includes a first plate facing a first direction and a second plate facing a second direction opposite to the first direction, forming a space between the first and second plates. The side member surrounds at least part of the space. The communication device is disposed in the housing and connected with the PCB. The side member includes a first antenna unit disposed on one side of the electronic device, electrically connected with a radio frequency (RF) module, and having a first metal frame. The housing further includes a board-type antenna which includes a second antenna unit electrically connected with a WiFi module, an antenna connector configured to electrically connect the first and second antenna units, and a third antenna unit electrically connected with the antenna connector.

公开(公告)号：US11888039B2

公开(公告)日：2024-01-30

申请号：US17352973

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Park ,  Myunggil Kang ,  Uihui Kwon ,  Seungkyu Kim ,  Ahyoung Kim ,  Youngseok Song

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L27/088

CPC classification number: H01L29/41775 ,  H01L27/088 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696

Abstract: An integrated circuit device includes a fin-type active region disposed on a substrate and extending in a first horizontal direction, a gate line disposed on the fin-type active region and extending in a second horizontal direction intersecting the first horizontal direction, the gate line including, a connection protrusion portion including a protrusion top surface at a first vertical level from the substrate, and a main gate portion including a recess top surface extending in the second horizontal direction from the connection protrusion portion, the recess top surface being at a second vertical level lower than the first vertical level, a gate contact disposed on the gate line and connected to the connection protrusion portion, a source/drain region disposed on the fin-type active region and disposed adjacent to the gate line, and a source/drain contact disposed on the source/drain region.