公开(公告)号：US20240005992A1

公开(公告)日：2024-01-04

申请号：US18207979

申请日：2023-06-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONGJIN SHIN ,  SANG-WON PARK ,  WON-TAECK JUNG ,  BYUNGSOO KIM ,  SU CHANG JEON

IPC: G11C16/08 ,  G11C16/24 ,  G11C16/04

CPC classification number: G11C16/08 ,  G11C16/24 ,  G11C16/0433

Abstract: An operation method of a memory device, having a memory block connected with wordlines, includes: (1) receiving a command from a memory controller, (2) activating a first block selection signal controlling first pass transistors configured to connect the wordlines connected with the memory block with driving lines, and (3) controlling the wordlines such that a first operation corresponding to the command is performed. After the first operation is completed, the method further includes: (4) pre-charging channels of the memory block with a first voltage and (5) performing a mode recovery operation such that the wordlines are controlled with a recovery voltage. The mode recovery operation includes deactivating the first block selection signal.