公开(公告)号：US20250006789A1

公开(公告)日：2025-01-02

申请号：US18425857

申请日：2024-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bo Kyung SHIN ,  Sang Min CHO ,  Jeong Yong CHOI ,  Dong Woo KANG ,  Hong Bae PARK

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes an active pattern including a lower pattern extending a first direction and a plurality of sheet patterns spaced apart from the lower pattern in a second direction, the plurality of sheet patterns including an uppermost sheet pattern, a plurality of gate structures disposed to be spaced apart from each other in the first direction on the active pattern and including gate electrodes extending in a third direction and gate spacers on sidewalls of the gate electrodes and a source/drain pattern disposed between the gate structures adjacent to each other and including a semiconductor liner film and a semiconductor filling film on the semiconductor liner film, wherein the semiconductor liner film covers a portion of an upper surface of an uppermost sheet pattern.