公开(公告)号：US20200243374A1

公开(公告)日：2020-07-30

申请号：US16539064

申请日：2019-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Hoon CHOI ,  Jaeung KOO ,  Kwansung KIM ,  Bo Yun KIM ,  Wandon KIM ,  Boun YOON ,  Jeonghyuk YIM ,  Yeryung JEON

IPC: H01L21/768 ,  H01L27/105 ,  H01L21/3105 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the semiconductor device including a semiconductor substrate including a first region and a second region; an interlayer insulating layer on the semiconductor substrate, the interlayer insulating layer including a first opening on the first region and having a first width; and a second opening on the second region and having a second width, the second width being greater than the first width; at least one first metal pattern filling the first opening; a second metal pattern in the second opening; and a filling pattern on the second metal pattern in the second opening, wherein the at least one first metal pattern and the second metal pattern each include a same first metal material, and the filling pattern is formed of a non-metal material.