公开(公告)号：US20210257384A1

公开(公告)日：2021-08-19

申请号：US17037532

申请日：2020-09-29

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seonghun Jeong ,  Byoungil Lee ,  Bosuk KANG

IPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11573 ,  H01L23/528 ,  H01L23/535 ,  H01L23/532

摘要： A three-dimensional nonvolatile memory device includes: a substrate including a cell area and an extension area having a staircase structure; a vertical structure on the substrate; a stacking structure having electrode layers and interlayer insulating layers on the substrate; a separation insulating layer on the substrate and separating the electrode layers; and a through-via wiring area adjacent to the cell or extension area and having through-vias passing through the substrate, wherein the cell area includes a main cell area in which normal cells are arranged and an edge cell area, the separation insulating layer includes a main separation insulating layer in the main cell area and an edge separation insulating layer in the edge cell area, and a lower surface of the main separation insulating layer is higher than the upper surface of the substrate and has a different depth than a lower surface of the edge separation insulating layer.

公开(公告)号：US20230081373A1

公开(公告)日：2023-03-16

申请号：US17829011

申请日：2022-05-31

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Bosuk KANG ,  Joonhee LEE ,  Seonghun JEONG

IPC分类号： H01L27/11575 ,  H01L27/11556 ,  H01L27/11548 ,  H01L27/11582

摘要： A semiconductor device includes a substrate having a first region and a second region, gate electrodes spaced apart from each other in a first direction, perpendicular to an upper surface of the substrate, and extend in a second direction, and have different lengths on the second region, channel structures that penetrate the gate electrodes, extend in the first direction, and respectively include a channel layer on the first region, support structures that penetrate the gate electrodes and extend in the first direction on the second region, and a separation region that penetrates the gate electrodes and extend in the second direction. The substrate has a recess region that overlaps the separation region in the first direction and extends downward from an upper surface in the second region, adjacent to the first region. The separation region has a protrusion that protrudes downward to correspond to the recess region.