公开(公告)号：US20250015134A1

公开(公告)日：2025-01-09

申请号：US18676686

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changju Moon ,  Donggwan Shin ,  Yonghee Park ,  Myunggil Kang ,  Jeongho Yoo

IPC: H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes an active region that extends on the substrate in a first direction; a plurality of semiconductor layers disposed on the active region and that are spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate; a gate structure disposed on the substrate and that crosses the active region and the plurality of semiconductor layers, surrounds each of the plurality of semiconductor layers, and extends in a second direction; a source/drain region disposed on at least one side of the gate structure and in contact with a portion of the plurality of semiconductor layers; and an epitaxial layer that is spaced apart from an uppermost semiconductor layer, is disposed below the source/drain region and between the active region and the source/drain region, and is in contact with at least a portion of the side surfaces of the lowermost semiconductor layer.