公开(公告)号：US20240055425A1

公开(公告)日：2024-02-15

申请号：US18365452

申请日：2023-08-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungju RYU ,  Sangjin KIM ,  Yigwon KIM ,  Changmin PARK

IPC: H01L27/088 ,  H01L29/775 ,  H01L29/423 ,  H01L29/06

CPC classification number: H01L27/088 ,  H01L29/775 ,  H01L29/42392 ,  H01L29/0673

Abstract: A semiconductor device is provided, the semiconductor device including; a substrate; a first fin structure extending on the substrate in a first direction, and having a first fin portion having a first width and a second fin portion having a second width; a second fin structure extending on the substrate in the first direction, and having the second width; first gate lines disposed on the first fin portion and the second fin structure, and extending in a second direction; second gate lines disposed on the second fin portion and the second fin structure, and extending in the second direction; a third gate line disposed on the second fin structure, and extending in the second direction between the first and second gate lines; and a device isolation pattern connected to an end portion of the third gate, and extending between the first and second fin portions.