公开(公告)号：US10886227B2

公开(公告)日：2021-01-05

申请号：US16217220

申请日：2018-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin Kim ,  Chang-Hwa Kim ,  Hwi-Chan Jun ,  Chui-Hong Park ,  Jae-Seok Yang ,  Kwan-Young Chun

IPC: H01L23/535 ,  H01L27/088 ,  H01L21/84 ,  H01L27/12 ,  H01L21/768 ,  H01L29/08 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.