公开(公告)号：US20220223592A1

公开(公告)日：2022-07-14

申请号：US17705565

申请日：2022-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seonghwa PARK ,  Hongbae PARK ,  Jaehyun LEE ,  Jonghan LEE ,  Dabok JEONG ,  Minseok JO

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/308

Abstract: A semiconductor device includes a first gate pattern and a second gate pattern on a substrate, the first gate pattern and the second gate pattern being spaced apart from each other, and a separation pattern that separates the first gate pattern and the second gate pattern from each other. The first gate pattern includes a first high-k dielectric pattern and a first metal-containing pattern on the first high-k dielectric pattern, the first metal-containing pattern covering a sidewall of the first high-k dielectric pattern. The second gate pattern includes a second high-k dielectric pattern and a second metal-containing pattern on the second high-k dielectric pattern, and the separation pattern is in direct contact with the first metal-containing pattern and spaced apart from the first high-k dielectric pattern.