公开(公告)号：US09754660B2

公开(公告)日：2017-09-05

申请号：US14946258

申请日：2015-11-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Jin Kwon ,  Kang-Ill Seo

IPC: H01L27/11 ,  G11C11/419

CPC classification number: G11C11/419 ,  G11C8/16 ,  G11C11/412 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1104

Abstract: Provided are a semiconductor device. The semiconductor device includes an SRAM cell including a first pull-up transistor, a first pull-down transistor and a first pass transistor formed on a substrate, a first read buffer transistor connected to gate terminals of the first pull-up transistor and the first pull-down transistor, and a second read buffer transistor which shares a drain terminal with the first read buffer transistor, wherein the first read buffer transistor includes a first channel pattern extending in a first direction vertical to an upper surface of the substrate, a first gate electrode which covers a part of the first channel pattern, and a first drain pattern which does not contact the first gate electrode, and which extends in the first direction, and which is electrically connected to the first channel pattern.

公开(公告)号：US10128254B2

公开(公告)日：2018-11-13

申请号：US15187529

申请日：2016-06-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Jin Kwon ,  Kang-Ill Seo

IPC: H01L29/423 ,  H01L27/11 ,  H01L23/528 ,  H01L29/78

Abstract: A semiconductor device includes a substrate, a first pattern, a first gate electrode, and a second pattern. The first pattern is disposed on the substrate and extends in a first direction substantially vertical to an upper surface of the substrate, and includes a first part, a second part and a third part sequentially disposed on the substrate. The first gate electrode is connected to the second part and extends in a second direction different from the first direction. The second pattern is disposed on the substrate, extends in the first direction, is connected to the first part, and does not contact the first gate electrode.

公开(公告)号：US09875791B2

公开(公告)日：2018-01-23

申请号：US15664591

申请日：2017-07-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Jin Kwon ,  Kang-Ill Seo

IPC: H01L27/11 ,  G11C11/419

CPC classification number: G11C11/419 ,  G11C8/16 ,  G11C11/412 ,  H01L27/0207 ,  H01L27/11 ,  H01L27/1104

Abstract: Provided are a semiconductor device. The semiconductor device includes an SRAM cell including a first pull-up transistor, a first pull-down transistor and a first pass transistor formed on a substrate, a first read buffer transistor connected to gate terminals of the first pull-up transistor and the first pull-down transistor, and a second read buffer transistor which shares a drain terminal with the first read buffer transistor, wherein the first read buffer transistor includes a first channel pattern extending in a first direction vertical to an upper surface of the substrate, a first gate electrode which covers a part of the first channel pattern, and a first drain pattern which does not contact the first gate electrode, and which extends in the first direction, and which is connected to the first channel pattern.