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公开(公告)号：US12229418B2
公开(公告)日：2025-02-18
申请号：US18101232
申请日：2023-01-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kyungduk Lee , Youn-Soo Cheon , Daehyeon Jo
Abstract: Provided is a method for operating a memory device including performing a first setting operation on a first operation, reading map data based on the first setting operation, and performing a second setting operation on a second operation.
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