公开(公告)号：US11955195B2

公开(公告)日：2024-04-09

申请号：US17748441

申请日：2022-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongkyung Kim ,  Dahye Min ,  Ukjin Jung

IPC: G11C11/412 ,  G11C29/50

CPC classification number: G11C29/50 ,  G11C11/412 ,  G11C2029/5004

Abstract: According to various embodiments, a semiconductor memory device includes a substrate that includes a memory cell region and a test region. The semiconductor memory device further includes an active pattern on the memory cell region, a source/drain pattern on the active pattern, a dummy pattern on the test region, a first gate electrode on the dummy pattern, a first common contact, and a first wiring layer. The first wiring layer includes a first test line electrically connected to the first common contact. The first common contact includes a first contact pattern in contact with the dummy pattern, and a first gate contact connected to the first gate electrode. The first gate contact includes a body and a protrusion part. A lowermost level of a top surface of the active pattern is lower than a lowermost level of a top surface of the dummy pattern.