公开(公告)号：US20240030283A1

公开(公告)日：2024-01-25

申请号：US18224745

申请日：2023-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooho JUNG ,  Junggil YANG ,  Deokhwan KIM

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/66 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

CPC classification number: H01L29/0649 ,  H01L27/092 ,  H01L29/66545 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78696

Abstract: An integrated circuit device includes: a fin-type active region protruding from a substrate and extending in a first lateral direction, wherein the fin-type active region includes a first sub-fin-type active region, a second sub-fin-type active region, and a third sub-fin-type active region that is disposed between the first sub-fin-type active region and the second sub-fin-type active region; a first gate line extending in a second lateral direction on the first sub-fin-type active region, wherein the second lateral direction intersects with the first lateral direction; a second gate line extending in the second lateral direction on the second sub-fin-type active region; a diffusion break structure passing through a portion of the third sub-fin-type active region in a vertical direction, wherein the diffusion break structure has a groove portion in an upper portion thereof; and a crack filler filling the groove portion.