-
公开(公告)号：US20190148167A1
公开(公告)日：2019-05-16
申请号：US16143614
申请日：2018-09-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Do-hoon KIM , Tae-hyung KIM , Jong-min BAEK , Han-dock SONG
IPC: H01L21/3213 , H01L21/3065 , C09K13/00
Abstract: An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.
Search Results
1
records
(took 0.011 seconds)
筛选
AND
AND
过滤
NOT
NOT
Scan to Join
