摘要:
An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.
摘要:
A system on chip includes a clock generator configured to generate a clock signal, and output the clock signal to a component device external to the system on chip. The system on chip further includes a duty ratio determiner configured to determine a component duty ratio, in response to a response that is received from the component device according to the clock signal, and a duty ratio adjustor configured to adjust a current duty ratio of the clock signal to the component duty ratio, and output the clock signal of which the current duty ratio is adjusted, to the component device.
摘要:
A method of displaying for allowing a plurality of application windows to be easily controlled and a display device therefor are provided. A method of displaying a screen on a display device includes displaying a button on a touch screen; splitting the touch screen into a plurality of regions based on the position at which the button is displayed, receiving a touch input to move a displayed button, obtaining a slope value of a line connecting a start point of the touch input to an end point thereof, selecting a region corresponding to the slope value from among the plurality of regions split, and moving the button to a certain position included in a selected region.
摘要:
A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
摘要:
A visible light sensitive photocatalyst including: a composite including a first metal oxide, a second metal oxide, and a heterojunction therebetween, wherein the first and second metal oxides each include a Group 11 metal, wherein a first bond between metal atoms of the first metal oxide has a length that is smaller than a Van der Waals distance between the metals of the first bond, wherein a second bond between metal atoms of the second metal oxide has a length that is smaller than a Van der Waals distance between the metals of the second bond, and, wherein the composite has a band gap energy of about 1.0 eV to about 2.5 eV.
摘要:
An integrated circuit includes a plurality of layers stacked in a first direction, a plurality of unit circuits at least partially overlapping each other in a second direction that is perpendicular to the first direction and configured to operate in parallel with one another, control circuitry configured to generate a control signal to control the plurality of unit circuits, and a multi-layer conducting line configured to transfer the control signal from the control circuitry to the plurality of unit circuits. The multi-layer conducting line may be integrally formed in a wiring layer and a via layer and extends in the second direction. The wiring layer and the via layer may be adjacent to each other.
摘要:
A semiconductor light-emitting device, and a method of manufacturing the same. The semiconductor light-emitting device includes a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked on a substrate, a first contact that passes through the substrate to be electrically connected to the first electrode layer, and a second contact that passes through the substrate, the first electrode layer, and the insulating layer to communicate with the second electrode layer. The first electrode layer is electrically connected to the first semiconductor layer by filling a contact hole that passes through the second electrode layer, the second semiconductor layer, and the active layer, and the insulating layer surrounds an inner circumferential surface of the contact hole to insulate the first electrode layer from the second electrode layer.
摘要:
A method of managing a memory of a device is provided. The method includes acquiring amount of memory use information of the device, estimating a memory use pattern, based on the amount of memory use information of the device, and acquiring an amount of memory of the device, based on the estimated memory use pattern.
摘要:
In an integrated circuit, a first delay locked loop circuit is configured to adjust a phase of a first clock signal input to a first clock input terminal, and to at least one of transmit and receive information based on the phase-adjusted first clock signal. A second delay locked loop circuit is configured to adjust a phase of a second clock signal input to a second clock input terminal, and to at least one of transmit and receive information based on the phase-adjusted second clock signal. A path selection circuit is configured to select, in response to a select signal, one of a first signal path through the first delay locked loop circuit and a second signal path through the second delay locked loop circuit as a signal path for at least one of transmitting and receiving the information.
摘要:
A light absorbing layer for a photoelectrode structure, the light absorbing layer including copper oxide, wherein metallic copper (Cu) is present at a grain boundary of the copper oxide. Also, a photoelectrode structure including the light absorbing layer, a photoelectrochemical cell including the photoelectrode structure, and a solar cell including the light absorbing layer.