公开(公告)号：US20210241818A1

公开(公告)日：2021-08-05

申请号：US17002002

申请日：2020-08-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongil LEE ,  Younghun SEO

IPC: G11C11/4091 ,  G11C11/4094 ,  G11C11/56

Abstract: A volatile memory device includes: a first sense amplifier connected to a first memory cell through a first bit line, and configured to sense 2-bit data stored in the first memory cell; a second sense amplifier connected to a second memory cell through a second bit line, and configured to sense 2-bit data stored in the second memory cell, the second bit line having a length greater than a length of the first bit line; and a driving voltage supply circuit configured to supply a first driving voltage to the first sense amplifier, and supply a second driving voltage to the second sense amplifier, the second driving voltage having a voltage level different from a voltage level of the first driving voltage.