公开(公告)号：US20240429303A1

公开(公告)日：2024-12-26

申请号：US18658176

申请日：2024-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggon Yoo ,  Eunhyea Ko ,  Sunjung Lee ,  Yongho Ha ,  Jeongwon Hwang

IPC: H01L29/45 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775

Abstract: An integrated circuit device includes a substrate, a fin-type active region extending in a first horizontal direction on a first surface of the substrate, a source/drain region on the fin-type active region, an active contact on the source/drain region and electrically connected to the source/drain region, a wiring line extending at a vertical level higher than the source/drain region, a via contact penetrating an insulating layer on the source/drain region and serving as a medium of electrical connection between the active contact and the wiring line, and an adhesive layer between the wiring line and the insulating layer and contacting the wiring line, wherein the via contact includes a top via contact and a bottom via contact, the top via contact includes a metal different from a metal included in the bottom via contact, and the wiring line and the top via contact are in direct contact with each other.