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公开(公告)号：US20250081585A1
公开(公告)日：2025-03-06
申请号：US18952625
申请日：2024-11-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaejin LEE , Youngjun KIM , Hunyoung BARK , Taekyung YOON , Eunok LEE
Abstract: A gate structure includes a first gate electrode including a metal, a gate barrier pattern on the first gate electrode and including a metal nitride, and a second gate electrode on the gate barrier pattern. The gate structure is buried in an upper portion of a substrate. The gate barrier pattern has a flat upper surface and an uneven lower surface.
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