公开(公告)号：US20250157896A1

公开(公告)日：2025-05-15

申请号：US18824553

申请日：2024-09-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Youngjun KIM ,  Taesun KIM

IPC: H01L23/495 ,  H01L23/498 ,  H01L27/092

Abstract: An integrated circuit device includes: a substrate including a backside surface; fin-type active regions protruding from the substrate such as to define a trench region on the substrate; a device isolation layer covering, in the trench region, a side wall of each of the fin-type active regions; a via power rail vertically extending through the device isolation layer between the fin-type active regions; and a backside power rail vertically extending through the substrate and connected to one end of the via power rail, wherein the via power rail includes a first portion connected to the backside power rail and a second portion on the first portion, and wherein two side walls of the first portion each include an inclined surface that is inclined such as to come closer to the pair of fin-type active regions as the two side walls approach the backside power rail.

公开(公告)号：US20230051597A1

公开(公告)日：2023-02-16

申请号：US17579919

申请日：2022-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonil LEE ,  Youngjun KIM ,  Jinbum KIM

IPC: H01L27/108

Abstract: A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.

公开(公告)号：US20240315009A1

公开(公告)日：2024-09-19

申请号：US18386916

申请日：2023-11-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon KIM ,  Dohyung KIM ,  Youngjun KIM ,  Taekjung KIM ,  Yeonju OH ,  Jaejin LEE ,  Dongju CHANG ,  Seohyeong JANG

IPC: H10B12/00

CPC classification number: H10B12/34 ,  H10B12/053 ,  H10B12/315

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes: an active pattern provided on a substrate and enclosed by a device isolation pattern; and a word line crossing the active pattern and the device isolation pattern in a first direction parallel to a bottom surface of the substrate, and including a first gate electrode and a second gate electrode, which are adjacent to each other in the first direction. A second work function of the second gate electrode is greater than a first work function of the first gate electrode.

公开(公告)号：US20250089236A1

公开(公告)日：2025-03-13

申请号：US18954927

申请日：2024-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonil LEE ,  Youngjun KIM ,  Jinbum KIM

IPC: H10B12/00

Abstract: A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.

公开(公告)号：US20240188285A1

公开(公告)日：2024-06-06

申请号：US18509539

申请日：2023-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjun KIM ,  Hyosub KIM ,  Junhyeok AHN

IPC: H10B12/00

CPC classification number: H10B12/482 ,  H10B12/02 ,  H10B12/315

Abstract: The semiconductor device includes an active pattern; a gate structure in an upper portion of the active pattern; a bit line structure on the active pattern, the bit line structure including a first metal; a first spacer on a sidewall of the bit line structure, the first spacer including an oxide of a second metal that has an ionization energy smaller than that of the first metal; a second spacer on an outer sidewall of the first spacer, the second spacer including an oxide of a third metal; a third spacer on a lower portion of an outer sidewall of the second spacer, the third spacer including a nitride; a fourth spacer on an upper portion of the outer sidewall of the second spacer and the third spacer; a fifth spacer and a sixth spacer sequentially stacked in a horizontal direction from an outer sidewall of the fourth spacer.

公开(公告)号：US20210374624A1

公开(公告)日：2021-12-02

申请号：US17236727

申请日：2021-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjun KIM ,  Doheum PARK ,  Yeongtae SHIN ,  Laura KANG ,  Bokang KIM

IPC: G06Q10/04 ,  G06N3/12 ,  G06Q10/06

Abstract: An electronic apparatus may include an interface; and a processor configured to obtain information related to time-sequentially generated quantities of a plurality of targets via the interface, identify a group comprising at least two targets that have a relation with respect to the time-sequentially generated quantities, identify a target quantity of the identified group satisfying a predetermined prediction criterion based on a plurality of candidate target quantities of the identified group, and output information related to prediction quantities of the plurality of targets included in the identified group based on a proportion between the time-sequentially generated quantities of the plurality of targets.

公开(公告)号：US20210334321A1

公开(公告)日：2021-10-28

申请号：US17284401

申请日：2019-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjun KIM ,  Chanmuk KIM ,  Dohyoung JUNG ,  Kwanghyun KOH

IPC: G06F16/955 ,  G06F16/9535 ,  G06F16/9538 ,  G06F40/284 ,  G06F11/34 ,  G06K9/62

Abstract: The present disclosure provides an electronic device and a control method therefor. An electronic device of the present disclosure may comprise a memory including at least one command, and a processor which is connected to the memory so as to control the electronic device, wherein the processor executes at least one instruction, so as to classify a uniform resource locator (URL) corresponding to at least one website accessed by a user during a preconfigured period into at least one segment, classify URLs according to a plurality of categories, on the basis of the at least one segment and a learned classification model, and determine, among the plurality of categories, a category of a website preferred by the user, on the basis of the user's website access history during the preconfigured period, an access history with respect to the at least one website, and a result of the classification. The electronic device of the present disclosure may use a rule-based model or an artificial intelligence model learned according to at least one of a machine learning, a neural network, or a deep learning algorithm.

公开(公告)号：US20240035159A1

公开(公告)日：2024-02-01

申请号：US18223606

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungrim KIM ,  Youngeun KIM ,  Youngjun KIM ,  Jihoon KIM ,  Taekjung KIM ,  Dongju CHANG

IPC: C23C16/455 ,  C23C16/448

CPC classification number: C23C16/45561 ,  C23C16/448 ,  C23C16/45589

Abstract: A precursor supply system includes a storage tank storing the precursor in a solid state; a transfer pipe connected to the storage tank to transfer the precursor in a solid state; a phase converter connected to the transfer pipe and sublimating the transported solid-state precursor into vapor; a supply pipe connected to the phase converter and transporting a precursor in a vaporous state; and a process chamber disposed adjacently to the phase converter and connected to the supply pipe.

公开(公告)号：US20230216203A1

公开(公告)日：2023-07-06

申请号：US17927837

申请日：2021-06-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junsig KUM ,  Hyunjin KIM ,  Youngjun KIM ,  Yoongeon KIM ,  Seungho CHOI

IPC: H01Q9/04 ,  H01Q9/40 ,  H01Q1/38 ,  H04B7/0413

CPC classification number: H01Q9/045 ,  H01Q9/40 ,  H01Q1/38 ,  H04B7/0413

Abstract: The present disclosure provides a surface-mountable antenna structure that is applicable to a broadband massive multi-input multi-output (MIMO) unit (MMU) in a wireless communication system. An antenna structure according to an embodiment of the present disclosure comprises: a printed circuit board including a first ground port, a second ground port, and a first feeding port; a first antenna electrically connected to the first ground port; a second antenna electrically connected to the second ground port; and a first feeding plate including a first bending part electromagnetically coupled to the first antenna, a second bending part electromagnetically coupled to the second antenna, and a third bending part electrically connected to the first feeding port.

公开(公告)号：US20210373514A1

公开(公告)日：2021-12-02

申请号：US17317572

申请日：2021-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewook KIM ,  Youngjun KIM ,  Doheum PARK ,  Yeongtae SHIN

IPC: G05B13/04

Abstract: An electronic apparatus and a control method thereof are provided. The electronic apparatus may include an interface; and a processor configured to obtain, via the interface, information related to values, which occur in time series, of a plurality of factors regarding a prediction object, identify, based on the information related to the values of the plurality of factors, at least one factor, from among the plurality of factors, having a time series change of values that corresponds to a time series change of reference values of the prediction object, and output information related to a predicted value of the prediction object based on the time series change of the values of the at least one factor.