公开(公告)号：US12211758B2

公开(公告)日：2025-01-28

申请号：US17558803

申请日：2021-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyounghoon Kim ,  Gaeun Kim ,  Joohee Park ,  Seokwoo Hong

IPC: H01L23/535 ,  H01L21/66 ,  H10B12/00 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor device and data storage system, the device including a substrate having a first region, a second region surrounding the first region, and a third region surrounding the second region; a memory structure on the first region; a first defect detector on the second region; and a dam structure on the third region, wherein the dam structure surrounds the first defect detector and includes a plurality of conductive lines stacked on the third region.

公开(公告)号：US12010852B2

公开(公告)日：2024-06-11

申请号：US17236053

申请日：2021-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonhwan Son ,  Gaeun Kim ,  Jeongseok Lee

IPC: H10B43/40 ,  H01L23/535 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

CPC classification number: H10B43/40 ,  H01L23/535 ,  H10B41/27 ,  H10B41/41 ,  H10B43/27

Abstract: A three-dimensional semiconductor memory device includes a peripheral circuit structure having peripheral circuits on a semiconductor substrate, and landing pads connected to the peripheral circuits, an electrode structure on the peripheral circuit structure, the electrode structure including vertically stacked electrodes, a planarized dielectric layer that covers the electrode structure, peripheral through plugs spaced apart from the electrode structure, the peripheral through plugs penetrating the planarized dielectric layer to connect to the landing pads, conductive lines connected through contact plugs, respectively, to the peripheral through plugs, and at least one dummy through plug adjacent to a first peripheral through plug of the peripheral through plugs, the at least one dummy through plug penetrating the planarized dielectric layer and being insulated from the conductive lines.

公开(公告)号：US20250080798A1

公开(公告)日：2025-03-06

申请号：US18932163

申请日：2024-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namhyun KIM ,  Gaeun Kim ,  Kyungwoo Kim ,  Kyumin Kim ,  Bora Park ,  Kangsik Yoon ,  Duhe Jang

IPC: H04N21/4402 ,  H04N21/426 ,  H04N21/434

Abstract: A transmission device includes a communication interface configured to perform communications with an external device and at least one display device, a memory configured to store analog data received from the external device, a signal processor, and a processor configured to control the signal processor to decode the analog data, separate the decoded analog data into analog audio data, analog video data, and analog additional data, convert the analog audio data, the analog video data, and the analog additional data, separated from one another, respectively, to digital audio data, digital video data, and digital additional data, configure a digital transport stream including a plurality of packets by separately packetizing the digital audio data, the digital video data, and the digital additional data, respectively, and transmit, using the communication interface, the digital transport stream to the at least one display device.