公开(公告)号：US20220020438A1

公开(公告)日：2022-01-20

申请号：US17195824

申请日：2021-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-Ho SEO ,  Jung Ho LEE ,  Dae Sik HAM ,  Gi Baek KIM ,  Sang Yong YOON ,  Won-Taeck JUNG

IPC: G11C16/30 ,  G11C16/10 ,  G11C16/26 ,  G11C16/04 ,  G11C16/08

Abstract: A non-volatile memory device including: a first string including a first string select transistor, a first memory cell and a first ground select transistor, a second string including a second string select transistor, a second memory cell and a second ground select transistor, and a controller to apply a pass voltage to a first string select line from a first time, apply a first read voltage to a first word line during a first read section from the first time to a second time, apply a first ground select line voltage to a first ground select line from the first time, apply a ground voltage to a second string select line, apply the first ground select line voltage to a second ground select line during a first control section, and apply a first common source line voltage to a common source line during the first control section.