公开(公告)号：US10304964B2

公开(公告)日：2019-05-28

申请号：US15238059

申请日：2016-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mongsong Liang ,  Sung-Dae Suk ,  Guemjong Bae

IPC: H01L29/786 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/11 ,  H01L29/06 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a first transistor, a second transistor and a third transistor provided on a substrate, the first to third transistors respectively including source and drain regions spaced apart from each other, a gate structure extending in a first direction on the substrate and interposed between the source and drain regions, and a channel region connecting the source and drain regions to each other. A channel region of the second transistor and a channel region of the third transistor respectively include a plurality of channel portions, the plurality of channel portions spaced apart from each other in a second direction, perpendicular to an upper surface of the substrate, and connected to the source and drain regions, respectively. A width of a channel portion of the third transistor in the first direction is greater than a width of a channel portion of the second transistor in the first direction.