公开(公告)号：US20250006636A1

公开(公告)日：2025-01-02

申请号：US18651142

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwang Guk AN ,  Jun Ho SONG ,  Zhe WU ,  So Yeon CHOI

IPC: H01L23/528 ,  H10B63/00 ,  H10N70/00

Abstract: A semiconductor memory device comprising: a substrate extending in a first direction and a second direction; first conductive lines extending in the first direction on the substrate; first insulating structures that are alternately arranged with the first conductive lines in the second direction, wherein the first insulating structures extend in a third direction intersecting the first direction and the second direction; first information storage films on the first conductive lines and the first insulating structures; and second conductive lines extending in the second direction on the first information storage films, wherein the first information storage films include first regions that overlap the first conductive lines in the third direction and second regions that overlap the first insulating structures in the third direction, and a first height of upper surfaces of the first regions is different from a second height of upper surfaces of the second regions.