公开(公告)号：US20250149443A1

公开(公告)日：2025-05-08

申请号：US18533031

申请日：2023-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SUJIN PARK ,  HONGSOO KIM ,  HEE-SUNG KAM ,  BYUNGJOO GO ,  Janghee JUNG

IPC: H01L23/528 ,  H01L23/522 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/41 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

Abstract: A semiconductor device may include a source structure including a cell region and an extension region adjacent to the cell region, a gate stack in the cell and extension regions, a penetration contact disposed in the extension region, a stepwise insulating layer disposed on the gate, and an interconnection structure on the stepwise insulating layer. The interconnection structure may include a first interconnection insulating layer, a first lower conductive pattern in the first interconnection insulating layer, a capping layer on the first interconnection insulating layer, and a via structure penetrating the capping layer. The via structure may include a plurality of first vias connected to the first lower conductive pattern and connected to an upper conductive pattern, and the first vias may be disposed in the extension region.