公开(公告)号：US20230010936A1

公开(公告)日：2023-01-12

申请号：US17568355

申请日：2022-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JEONGGI JIN ,  GYUHO KANG ,  UNBYOUNG KANG ,  HEEWON KIM ,  JUMYONG PARK ,  HYUNSU HWANG

IPC: H01L23/00 ,  H01L23/48 ,  H01L23/532 ,  H01L23/522

Abstract: A semiconductor chip includes: a semiconductor substrate; a pad insulating layer on the semiconductor substrate; a through electrode which penetrates the semiconductor substrate and the pad insulating layer and includes a conductive plug and a conductive barrier layer surrounding a sidewall of the conductive plug; and a bonding pad which surrounds a sidewall of the through electrode and is spaced apart from the conductive plug with the conductive barrier layer disposed therebetween.