公开(公告)号：US20220139474A1

公开(公告)日：2022-05-05

申请号：US17384219

申请日：2021-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYEJI LEE ,  RAEYOUNG LEE ,  JINKYU KANG ,  SEJUN PARK ,  JAEDUK LEE

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26

Abstract: A memory controller includes an over-program controller that preprograms and then erases the memory cells such that each of the memory cells has a first threshold voltage level, wherein fast cells are detected among the memory cells according to a threshold voltage less than or equal to a second threshold voltage less than the first threshold voltage, and a processor that generates fast cell information identifying the fast cells among the memory cells and stores the fast cell information in a buffer. The over-program controller controls the over-programming of the fast cells and normal programming of normal cells among the memory cells based on the fast cell information stored in the buffer.