公开(公告)号：US20220302274A1

公开(公告)日：2022-09-22

申请号：US17580847

申请日：2022-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUYOUN KIM ,  HYUNG JONG LEE ,  SEULGI YUN ,  SEKI HONG

IPC: H01L29/423 ,  H01L27/092

Abstract: A semiconductor device includes a first active pattern on a substrate. The first active pattern includes a pair of first source/drain patterns and a first channel pattern therebetween. A gate electrode is disposed on the first channel pattern, and a first gate spacer is disposed on a side surface of the gate electrode. The first gate spacer includes a first spacer and a second spacer. A top surface of the first spacer is lower than a top surface of the second spacer. A first blocking pattern is disposed on the first spacer, and a gate contact is coupled to the gate electrode. The first blocking pattern is interposed between the gate contact and the second spacer.