公开(公告)号：US20250149475A1

公开(公告)日：2025-05-08

申请号：US18802580

申请日：2024-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Min Seung JI ,  Ha Seob SEONG ,  Hyeon Min LEE ,  Ae-Nee JANG

IPC: H01L23/00 ,  H01L23/13 ,  H01L23/48 ,  H01L23/528 ,  H01L25/18 ,  H05K1/18 ,  H10B80/00

Abstract: A semiconductor includes a first semiconductor chip, and a second semiconductor chip provided on the first semiconductor chip. The first semiconductor chip includes a first semiconductor substrate including a first front side and a first back side, and a first back-side bonding layer including a first back-side bonding insulating film, and a first back-side bonding pad, wherein the second semiconductor chip includes a second semiconductor substrate including a second front side that faces the first back side and a second back side, and a second front-side bonding layer including a second front-side bonding insulating film bonded to the first back-side bonding insulating film. A side of the first semiconductor chip includes a plurality of first recesses, which are arranged along a vertical direction, and a second recess, which partially exposes a bottom surface of the second front-side bonding layer between the second front-side bonding layer and the first recesses.