公开(公告)号：US20240268105A1

公开(公告)日：2024-08-08

申请号：US18391804

申请日：2023-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghwan KIM ,  Sungho JANG ,  Jiseok KWON ,  Haein JUNG ,  Seungho HONG

IPC: H10B12/00

CPC classification number: H10B12/50 ,  H10B12/315

Abstract: A semiconductor device includes: a substrate including a cell region and a peripheral circuit region; an active region; a cell word line extending across the active region in a first horizontal direction within the cell region; a cell bit line extending in a second horizontal crossing the first horizontal direction in the cell region; a peripheral circuit gate structure extending in the second horizontal direction on the substrate; a peripheral circuit spacer structure disposed on a sidewall of the peripheral circuit gate structure; a peripheral circuit etch stop layer disposed on the substrate, and separated from the peripheral circuit gate structure and the peripheral circuit spacer structure; and a peripheral circuit contact connected to the substrate by penetrating the peripheral circuit etch stop layer. The peripheral circuit etch stop layer has an end portion positioned between the peripheral circuit contact and the peripheral circuit spacer structure.