公开(公告)号：US20230282674A1

公开(公告)日：2023-09-07

申请号：US18117201

申请日：2023-03-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haewook JEONG ,  Wonseok LEE ,  Minchul LEE ,  Masamichi ITO

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14614 ,  H01L27/1464

Abstract: An image sensor is provided. The image sensor includes: a semiconductor substrate including a first surface and a second surface, which are opposite to each other; a photoelectric conversion region in the semiconductor substrate; a vertical transfer gate, which extends into the semiconductor substrate from the first surface toward the photoelectric conversion region; a floating diffusion region, which is provided in the semiconductor substrate, is spaced apart from the vertical transfer gate, and is an n-type impurity region; and a second impurity region, which is provided between the vertical transfer gate and the floating diffusion region and is a p-type impurity region.