公开(公告)号：US20220285207A1

公开(公告)日：2022-09-08

申请号：US17826366

申请日：2022-05-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin KANG ,  Jong Min BAEK ,  Woo Kyung YOU ,  Kyu-Hee HAN ,  Han Seong KIM ,  Jang Ho LEE ,  Sang Shin JANG

IPC: H01L21/768 ,  H01L23/48

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

公开(公告)号：US20240112949A1

公开(公告)日：2024-04-04

申请号：US18537896

申请日：2023-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin KANG ,  Jong Min BAEK ,  Woo Kyung YOU ,  Kyu-Hee HAN ,  Han Seong KIM ,  Jang Ho LEE ,  Sang Shin JANG

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76808 ,  H01L23/481 ,  H01L21/76832

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.

公开(公告)号：US20210020497A1

公开(公告)日：2021-01-21

申请号：US16798789

申请日：2020-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jin KANG ,  Jong Min BAEK ,  Woo Kyung YOU ,  Kyu-Hee HAN ,  Han Seong KIM ,  Jang Ho LEE ,  Sang Shin JANG

IPC: H01L21/768 ,  H01L23/48

Abstract: A semiconductor device including a first interlayer insulating film; a conductive pattern in the first interlayer insulating film; a resistance pattern on the conductive pattern; an upper etching stopper film spaced apart from the resistance pattern, extending in parallel with a top surface of the resistance pattern, and including a first metal; a lower etching stopper film on the conductive pattern, extending in parallel with a top surface of the first interlayer insulating film, and including a second metal; and a second interlayer insulating film on the upper etching stopper film and the lower etching stopper film, wherein a distance from a top surface of the second interlayer insulating film to a top surface of the upper etching stopper film is smaller than a distance from the top surface of the second interlayer insulating film to a top surface of the lower etching stopper film.