公开(公告)号：US11637019B2

公开(公告)日：2023-04-25

申请号：US17393201

申请日：2021-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang Sun Hwang ,  Han Sol Seok ,  Hyun Ku Kang ,  Byoung Ho Kwon ,  Chung Ki Min

IPC: H01L21/3105 ,  H01L25/065 ,  H01L21/762 ,  H01L27/11582 ,  H01L29/06 ,  H01L27/11556 ,  H01L21/78

Abstract: A semiconductor device includes a stacked structure on a substrate. The stacked structure includes stepped regions and a central region between the stepped regions, an upper insulation layer on the stacked structure, and a capping insulation layer on the stepped regions of the stacked structure. The capping insulation layer includes a first upper end portion and a second upper end portion that are adjacent to the upper insulation layer. The upper insulation layer is between the first upper end portion and the second upper end portion. The first upper end portion and the second upper end portion extends a first height relative to the substrate that is different from a second height relative to the substrate of the second upper end portion.

公开(公告)号：US11087990B2

公开(公告)日：2021-08-10

申请号：US16433218

申请日：2019-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang Sun Hwang ,  Han Sol Seok ,  Hyun Ku Kang ,  Byoung Ho Kwon ,  Chung Ki Min

IPC: H01L27/11582 ,  H01L21/3105 ,  H01L25/065 ,  H01L21/762 ,  H01L29/06 ,  H01L27/11556 ,  H01L21/78

Abstract: A semiconductor device includes a stacked structure on a substrate. The stacked structure includes stepped regions and a central region between the stepped regions, an upper insulation layer on the stacked structure, and a capping insulation layer on the stepped regions of the stacked structure. The capping insulation layer includes a first upper end portion and a second upper end portion that are adjacent to the upper insulation layer. The upper insulation layer is between the first upper end portion and the second upper end portion. The first upper end portion and the second upper end portion extends a first height relative to the substrate that is different from a second height relative to the substrate of the second upper end portion.