公开(公告)号：US11935952B2

公开(公告)日：2024-03-19

申请号：US17945921

申请日：2022-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Doo Jeon ,  Han-Wool Park ,  Se-Jin Park ,  No-Young Chung

IPC: H01L29/78 ,  H01L21/762 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/76224 ,  H01L29/66545 ,  H01L29/66795

Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.

公开(公告)号：US11469325B2

公开(公告)日：2022-10-11

申请号：US16393234

申请日：2019-04-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Doo Jeon ,  Han-Wool Park ,  Se-Jin Park ,  No-Young Chung

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/762 ,  H01L29/66

Abstract: Provided in a semiconductor device including a substrate, an active region upwardly protruding from the substrate, a plurality of active fins upwardly protruding from the active region and extending in a first direction parallel to an upper surface of the substrate, the plurality of active fins being provided in a second direction that is parallel to the upper surface of the substrate and intersects with the first direction, and an isolation structure provided on the substrate, the isolation structure covering a sidewall of the active region and a lower portion of a sidewall of each of the plurality of active fins, wherein a first sidewall of the active region adjacent to a first active fin among the plurality of active fins has a staircase shape, the first active fin being provided on a first edge of the active region in the second direction.