公开(公告)号：US09270105B2

公开(公告)日：2016-02-23

申请号：US14016644

申请日：2013-09-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hyok Ko ,  Woo-seok Kim ,  Han-gu Kim ,  Sang-young Cho

IPC: H02H3/22 ,  H02H3/20 ,  H02H9/04 ,  H01L27/02

CPC classification number: H02H3/20 ,  H01L27/0266 ,  H02H9/04 ,  H02H9/043 ,  H02H9/046

Abstract: A semiconductor apparatus that includes: a first high-voltage transistor having a gate and a first electrode, wherein the first electrode is connected to a first pad and a parasitic capacitance forms between the gate and the first electrode; and a clamping circuit that is connected to the gate of the first high-voltage transistor, wherein the clamping circuit detects a change in a level of a gate voltage of the first high-voltage transistor due to electrostatic discharge, and clamps the gate voltage of the first high-voltage transistor according to a result of the detection.

Abstract translation: 一种半导体装置，包括：具有栅极和第一电极的第一高压晶体管，其中所述第一电极连接到第一焊盘，并且在所述栅极和所述第一电极之间形成寄生电容; 以及钳位电路，其连接到所述第一高压晶体管的栅极，其中所述钳位电路检测由于静电放电而导致的所述第一高压晶体管的栅极电压的电平的变化，并钳位所述第一高压晶体管的栅极电压 第一高压晶体管根据检测结果。