公开(公告)号：US11639550B2

公开(公告)日：2023-05-02

申请号：US17501146

申请日：2021-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Gu Kim ,  Homin Son ,  Junghyeon Kim ,  Hangkyu Song ,  Eunha Oh ,  Oleg Feygenson ,  Donghyun Jang ,  Sung-Woo Jeon ,  Wooyeon Hwang

IPC: H01L21/67 ,  C23C16/46 ,  H01L21/02 ,  C23C16/455 ,  C23C16/448 ,  C23C16/458

Abstract: An apparatus for depositing a thin layer and associated method, the apparatus including a process chamber; a support in the process chamber, substrates being supportable on the support at different heights; a gas injector configured to inject a gas into the process chamber; and a heater configured to heat the process chamber, wherein the gas injector includes a first injector configured to inject a first gas; and a second injector configured to inject a second gas, a flow rate of the first gas injected from the first injector ranges from 120 sccm to 240 sccm, and a flow rate of the second gas injected from the second injector ranges from 1,200 sccm to 2,400 sccm.