公开(公告)号：US12204835B2

公开(公告)日：2025-01-21

申请号：US16278767

申请日：2019-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Hyun Cha ,  Higashi Kotakemori ,  Hiroyuki Kubotera

IPC: G06F30/3308 ,  G06F30/327 ,  G06F30/33 ,  G06T17/10 ,  G06T17/20

Abstract: A non-transitory computer-readable storage medium stores instructions. When executed by a computer, the instructions cause the computer to perform a method for a semiconductor design simulation. The method may include generating first polygon meshes, transforming the first polygon meshes to first level sets, performing logical operations on the first level sets to generate second level sets, and transforming the second level sets to second polygon meshes.