公开(公告)号：US20200118629A1

公开(公告)日：2020-04-16

申请号：US16422213

申请日：2019-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Kyu KIM ,  Young-Sun MIN ,  Dae-Seok BYEON ,  Ho-Kil LEE

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/32

Abstract: A high voltage switch circuit includes a first transistor, a first depletion mode transistor, a level shifter, a control signal generator, a second transistor and a second depletion mode transistor. The first transistor transmits the second driving voltage to an output terminal in response to a first gate signal. The first depletion mode transistor transmits the second driving voltage to the first transistor in response to feedback from the output terminal. The control signal generator generates first and second control signals in response to a level-shifted enable signal. The second transistor has a gate electrode connected to the first voltage and is turned on and off in response to the second control signal at a first end of the second transistor. The second depletion mode transistor is connected between a second end of the second transistor and the output terminal, and has a gate electrode receiving the first control signal.