公开(公告)号：US11174549B2

公开(公告)日：2021-11-16

申请号：US16420725

申请日：2019-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Cheul Kim ,  Kap-Soo Lee ,  Keun-Young Lee ,  Hong-Taek Lim ,  Jeong-Woo Hyun ,  Dong-Hoon Han

IPC: C23C16/02 ,  C23C16/44 ,  C23C16/50 ,  C23C16/06 ,  C23C16/34 ,  H01L21/285 ,  H01J37/32 ,  H01L27/11556 ,  H01L27/11582

Abstract: In a substrate processing method, a cleaning process is performed at a first temperature to remove a portion of a cumulative layer that is deposited within a chamber by deposition processes (step 1). The deposition processes are performed at the first temperature on a plurality of substrates within the chamber respectively (step 2). The step 1 and the step 2 are performed alternately and repeatedly.