公开(公告)号：US20220334474A1

公开(公告)日：2022-10-20

申请号：US17721852

申请日：2022-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongjoon LEE ,  Sungan DO ,  Sukkoo HONG ,  Seongji KWON ,  Jonghoon KIM ,  Sooyoung KIM ,  Jaehee CHOI

IPC: G03F7/004 ,  G03F7/038

Abstract: A photoresist composition and a method of fabricating a semiconductor device, the composition including a photosensitive polymer having a protecting group; a photoacid generator (PAG); a metal precursor, the metal precursor being capable of generating metal ions and secondary electrons in response to irradiating light of a 13.5 nm wavelength thereto; and a solvent.