公开(公告)号：US10529406B2

公开(公告)日：2020-01-07

申请号：US15823152

申请日：2017-11-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Won Jun Choi ,  Hui Kap Yang

IPC: G11C11/00 ,  G11C11/406 ,  G11C7/04 ,  G11C14/00 ,  G11C11/4078

Abstract: A memory device includes a memory cell array that includes a plurality of memory cell rows, a temperature sensor that detects a temperature of the memory cell array and generates internal temperature data, a first register that stores external temperature data received from outside of the memory device, and a refresh control unit that determines a skip ratio of refresh commands received at a refresh frequency that corresponds to the external temperature data by comparing the internal temperature data and the external temperature data and performing a refresh operation for the plurality of memory cell rows in response to refresh commands skipped and transmitted based on the skip ratio.