IMAGE SENSOR AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230136919A1

    公开(公告)日:2023-05-04

    申请号:US17886578

    申请日:2022-08-12

    Abstract: An image sensor includes: a substrate including an active region and a peripheral region, unit pixels disposed on the active region, device isolation patterns defining the unit pixels disposed on the active region, a light-shield layer on the substrate and having a grid structure defining optical transmission regions, color filters on the light-shield layer, and microlenses on the color filters. The device isolation patterns include first device isolation patterns and a second device isolation pattern, wherein the first device isolation patterns are disposed on a central portion of the active region, and the second device isolation pattern is between the first device isolation patterns and the peripheral region. The first device isolation patterns have a first top surface substantially parallel to a bottom surface of the substrate. The second device isolation pattern has a second top surface, wherein the second top surface approaches the bottom surface of the substrate in a direction toward the peripheral region.

    IMAGE SENSOR
    3.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号:US20240105745A1

    公开(公告)日:2024-03-28

    申请号:US18241478

    申请日:2023-09-01

    CPC classification number: H01L27/14625 H01L27/14621

    Abstract: Provided is an image sensor including a sensor substrate, a spacer layer on the sensor substrate, and a color separating lens array on the spacer layer and configured to separate light based on a wavelength of the light, wherein the color separating lens array includes a first lens layer including a plurality of first nano posts and a first peripheral material layer around the plurality of first nano posts, a chemical mechanical polishing (CMP) stop layer on the first peripheral material layer, an etch stop layer on an upper surface of the CMP stop layer and directly on an upper surface of each first nano post of the plurality of first nano posts, and a second lens layer on the etch stop layer, the second lens layer including a plurality of second nano posts and a second peripheral material layer around the plurality of second nano posts.

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