-
公开(公告)号：US20240260477A1
公开(公告)日：2024-08-01
申请号：US18364619
申请日：2023-08-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jae Hoon KIM , Hyeonwoo SEO , YoungJun CHO
Abstract: A method of manufacturing a magnetic memory device may include forming a bottom electrode layer on a substrate; forming a block structure on the bottom electrode layer; performing a first deposition process on the bottom electrode layer to form a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer on the bottom electrode layer; performing a second deposition process on the free magnetic layer to form a capping layer on the free magnetic layer; and performing an etching process after forming a hard mask on the capping layer to form magnetic tunnel junction patterns. The first deposition process may include irradiating a first beam toward the substrate. The second deposition process may include irradiating a second beam toward the substrate. The second beam may have a greater angle than the first beam with respect to a normal line perpendicular to an upper surface of the substrate.
-
公开(公告)号：US20220102427A1
公开(公告)日：2022-03-31
申请号：US17230029
申请日：2021-04-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jae Hoon KIM , Sang Hwan PARK , Yong-Sung PARK , Hyeonwoo SEO , Se Chung OH , Hyun CHO
Abstract: A variable resistance memory device including a substrate; horizontal structures spaced apart from each other in a first direction perpendicular to a top surface of the substrate; variable resistance patterns on the horizontal structures, respectively; and conductive lines on the variable resistance patterns, respectively, wherein each of the horizontal structures includes a first electrode pattern, a semiconductor pattern, and a second electrode pattern arranged along a second direction parallel to the top surface of the substrate, and each of the variable resistance patterns is between one of the second electrode patterns and a corresponding one of the conductive lines.
-
Search Results
2
records
(took 0.013 seconds)
