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    SEMICONDUCTOR MEMORY DEVICE
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20220254783A1

    公开(公告)日：2022-08-11

    申请号：US17731611

    申请日：2022-04-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon KIM ,  Kwang-Ho PARK ,  Yong-Hoon SON ,  Hyunji SONG ,  Gyeonghee LEE ,  Seungjae JUNG

    IPC: H01L27/108 ,  G11C11/4097

    Abstract: A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THEREOF
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THEREOF 有权

    公开(公告)号：US20220208768A1

    公开(公告)日：2022-06-30

    申请号：US17699839

    申请日：2022-03-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung Jae JUNG ,  Jae Hoon KIM ,  Kwang-Ho PARK ,  Yong-Hoon SON

    IPC: H01L27/108

    Abstract: A semiconductor device includes a bit line extending in a first direction, a gate electrode extending in a second direction, and a semiconductor pattern extending in a third direction and connected to the bit line, and a capacitor. The capacitor includes a first electrode connected to the semiconductor pattern and a dielectric film between the first and second electrodes. The first or the second direction is perpendicular to an upper surface of the substrate. The first electrode includes an upper and a lower plate region parallel to the upper surface of the substrate, and a connecting region which connects the upper and the lower plate regions. The upper and the lower plate regions of the first electrode include an upper and a lower surface facing each other. The dielectric film extends along the upper and the lower surfaces of the upper and lower plate regions of the first electrode.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THEREOF
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THEREOF 有权

    公开(公告)号：US20210257368A1

    公开(公告)日：2021-08-19

    申请号：US17038606

    申请日：2020-09-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung Jae JUNG ,  Jae Hoon KIM ,  Kwang-Ho PARK ,  Yong-hoon SON

    IPC: H01L27/108 ,  H01L27/13

    Abstract: A semiconductor device includes a bit line extending in a first direction, a gate electrode extending in a second direction, and a semiconductor pattern extending in a third direction and connected to the bit line, and a capacitor. The capacitor includes a first electrode connected to the semiconductor pattern and a dielectric film between the first and second electrodes. The first or the second direction is perpendicular to an upper surface of the substrate. The first electrode includes an upper and a lower plate region parallel to the upper surface of the substrate, and a connecting region which connects the upper and the lower plate regions. The upper and the lower plate regions of the first electrode include an upper and a lower surface facing each other. The dielectric film extends along the upper and the lower surfaces of the upper and lower plate regions of the first electrode.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20210134800A1

    公开(公告)日：2021-05-06

    申请号：US16898640

    申请日：2020-06-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwang-Ho PARK ,  Jae Hoon KIM ,  Yong-Hoon SON ,  Seung Jae JUNG

    IPC: H01L27/108

    Abstract: A semiconductor memory device including first-first conductive lines on a substrate; second-first conductive lines on the first-first conductive lines; first contacts connected to the first-first conductive lines; and second contacts connected to the second-first conductive lines, wherein the first-first conductive lines protrude in a first direction beyond the second-first conductive lines; the first-first conductive lines include first regions having a first thickness, second regions having a second thickness, the second thickness being greater than the first thickness, and third regions having a third thickness, the third thickness being smaller than the first thickness and smaller than the second thickness, and the second regions of the first-first conductive lines are between the first regions of the first-first conductive lines and the third regions of the first-first conductive lines.

    COMMUNICATION METHOD OF CONTENT REQUESTER AND CONTENT PROVIDER TO PROVIDE CONTENT AND REAL-TIME STREAMING CONTENT IN CONTENT-CENTRIC NETWORK (CCN) BASED ON CONTENT NAME
    6.
    发明申请
    COMMUNICATION METHOD OF CONTENT REQUESTER AND CONTENT PROVIDER TO PROVIDE CONTENT AND REAL-TIME STREAMING CONTENT IN CONTENT-CENTRIC NETWORK (CCN) BASED ON CONTENT NAME 审中-公开
    内容请求者和内容提供商在内容中心网络（CCN）内提供内容和实时流媒体内容的通信方法

    公开(公告)号：US20140237085A1

    公开(公告)日：2014-08-21

    申请号：US14263275

    申请日：2014-04-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Joong Hong PARK ,  Jae Hoon KIM ,  Myeong Wuk JANG

    IPC: H04L29/06

    CPC classification number: H04L65/4084 ,  G06Q50/10 ,  H04L65/602 ,  H04L65/80 ,  H04L67/2838

    Abstract: Provided is a communication method of a content requester to provide content in a Content-Centric Network (CCN). The method is based on a content name, including generating a content request packet including an identifier indicating a content request based on a predetermined time unit to request content, transmitting the generated content request packet, and receiving segments of the content that correspond to the predetermined time unit. Also provided are corresponding communication methods of a content provider and a node in the CCN.

    Abstract translation: 提供了内容请求者在以内容为中心的网络（CCN）中提供内容的通信方法。 该方法基于内容名称，包括基于预定时间单位生成包含指示内容请求的标识符的内容请求分组，以请求内容，发送生成的内容请求分组，以及接收与预定的对应的内容的分段 时间单位 还提供了内容提供商和CCN中的节点的相应通信方法。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权

    公开(公告)号：US20230031207A1

    公开(公告)日：2023-02-02

    申请号：US17963591

    申请日：2022-10-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Hoon SON ,  Jae Hoon KIM ,  Kwang-ho PARK ,  Seungjae JUNG

    IPC: H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/306 ,  H01L21/285

    Abstract: A semiconductor memory device includes a stack structure comprising a plurality of layers vertically stacked on a substrate, each layer including a semiconductor pattern, a gate electrode extending in a first direction on the semiconductor pattern, and a data storage element electrically connected to the semiconductor pattern, a plurality of vertical insulators penetrating the stack structure, the vertical insulators arranged in the first direction, and a bit line provided at a side of the stack structure and extending vertically. The bit line electrically connects the semiconductor patterns which are stacked. Each of the vertical insulators includes first and second vertical insulators adjacent to each other. The gate electrode includes a connection portion disposed between the first and second vertical insulators.

    SEMICONDUCTOR MEMORY DEVICE
    8.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20210125991A1

    公开(公告)日：2021-04-29

    申请号：US16923572

    申请日：2020-07-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae Hoon KIM ,  Kwang-Ho PARK ,  Yong-Hoon SON ,  Hyunji SONG ,  Gyeonghee LEE ,  Seungjae JUNG

    IPC: H01L27/108 ,  G11C11/4097

    Abstract: A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE
    9.
    发明申请
    THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20210082941A1

    公开(公告)日：2021-03-18

    申请号：US16857507

    申请日：2020-04-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yong-Hoon SON ,  Jae Hoon KIM ,  Kwang-ho PARK ,  Hyunji SONG ,  Gyeonghee LEE ,  Seungjae JUNG

    IPC: H01L27/11573 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11565 ,  H01L23/522 ,  H01L23/528

    Abstract: A semiconductor memory device is disclosed. The device includes a peripheral circuit structure on a substrate, a semiconductor layer on the peripheral circuit structure, an electrode structure on the semiconductor layer, the electrode structure including electrodes stacked on the semiconductor layer, a vertical channel structure penetrating the electrode structure and being connected to the semiconductor layer, a separation structure penetrating the electrode structure, extending in a first direction, and horizontally dividing the electrode of the electrode structure into a pair of electrodes, an interlayered insulating layer covering the electrode structure, and a through contact penetrating the interlayered insulating layer and being electrically connected to the peripheral circuit structure.

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