公开(公告)号：US20250098264A1

公开(公告)日：2025-03-20

申请号：US18604031

申请日：2024-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangcheol NA ,  Beomjin KIM ,  Yoolim AHN ,  Kyoungwoo LEE ,  Minseung LEE ,  Hyeryeong LEE ,  Keun Hwi CHO ,  Seungseok HA

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes an insulating layer including a first surface, a second surface, and an element isolation trench, an insulating pattern on the first surface of the insulating layer, an active pattern on the insulating pattern and including channel patterns, a source/drain pattern on at least one side of the active pattern, a lower wiring structure on the second surface of the insulating layer, and a through-via that extending in the insulating layer and connecting the source/drain pattern and the lower wiring structure, where the insulating pattern may include a first portion between the insulating layer and the active pattern, a second portion surrounding at least a portion of the through-via, and a third portion on a bottom surface of the element isolation trench.