公开(公告)号：US20240211387A1

公开(公告)日：2024-06-27

申请号：US18227777

申请日：2023-07-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunsoo Cho ,  Jaesub Kim ,  Hyunho Seo ,  Yoonsu Jo ,  Hanchan Jo

IPC: G06F12/02

CPC classification number: G06F12/02

Abstract: A storage device for migrating data to a destination storage device is provided. The storage device includes: a memory device; and a memory controller configured to: generate an identification command according to a migration request received from a host, transmit the identification command to the destination storage device, transmit first data stored in the memory device to the destination storage device according to a response signal of the destination storage device, based on whether an input/output (IO) signal indicating an operation to generate second data based on the first data is received from the host, transmit the second data to the destination storage device, and transmit a migration completion signal to the host after completing transmission of the first data and the second data to the destination storage device

公开(公告)号：US11899980B2

公开(公告)日：2024-02-13

申请号：US17969959

申请日：2022-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunsoo Cho ,  Dong-Min Kim ,  Kyoung Back Lee

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0644 ,  G06F3/0679

Abstract: An operation method of a UFS device including: determining, by a host, area information for write data, wherein in a turbo read the write data is stored in a non-pinned or pinned buffer area and in a normal read the write data is stored in a user storage; transferring, by the host, a first command UFS protocol information unit (UPIU); transferring, by the UFS device, an RTT UPIU to the host, transferring, by the host, a DATA OUT UPIU to the UFS device; mapping, by UFS device, a first logical block address with a physical address of an area corresponding to the area information; transferring, by the host, a second command UPIU; and performing the turbo read on the area to read data corresponding to the first logical block address when the area corresponding to the area information is the pinned or non-pinned turbo write buffer.

公开(公告)号：US12086433B2

公开(公告)日：2024-09-10

申请号：US17740405

申请日：2022-05-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeangsu Hwang ,  Hyunsoo Cho

IPC: G06F3/06

CPC classification number: G06F3/0631 ,  G06F3/0604 ,  G06F3/0679

Abstract: An electronic system includes a host including a host memory; and a storage device storing data from the host, wherein the host allocates first and second host memory buffer (HMB) regions having different attributes in the host memory, and provides a host memory descriptor list (HMDL) including address information and attribute information of each of the first and second HMB regions to the storage device, the storage device buffers data in the first and second HMB regions with reference to the HMDL, and the host releases the first and second HMB regions, and provides data buffered in the first HMB region to the storage device and maintains data buffered in the second HMB region in the host memory, according to an attribute of each of the first and second HMB regions.

公开(公告)号：US11500583B2

公开(公告)日：2022-11-15

申请号：US16943268

申请日：2020-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunsoo Cho ,  Dong-Min Kim ,  Kyoung Back Lee

IPC: G06F3/06

Abstract: A storage device including: a nonvolatile memory device including a first, second and third area; and a controller to receive a first write command including a first logical block address from a host, to receive first data corresponding to the first logical block address in response to the first write command, and store the first data in the nonvolatile memory device, when the first write command includes area information, the controller stores the first data in the first area or the second area based on the area information, when the first write command does not include the area information, the controller stores the first data in the third area, each of the first area and the second area includes memory cells each storing “n” bits (n being a positive integer), and the third area includes memory cells each storing “m” bits (m being a positive integer greater than n).

公开(公告)号：US11194711B2

公开(公告)日：2021-12-07

申请号：US16939913

申请日：2020-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunsoo Cho ,  Dong-Min Kim

IPC: G06F12/00 ,  G06F12/02 ,  G06F9/30 ,  G06F12/0871 ,  G06F12/0873 ,  G06F12/0893 ,  G06F13/16

Abstract: A storage device includes a nonvolatile memory device including a first region and a second region, and a controller that receives a first operation command including move attribute information and a first logical block address from an external host device and moves first data corresponding from the first region to the second region in response to the received first operation command, and when the first operation command does not include the move attribute information, the controller performs a first operation corresponding to the first operation command.