公开(公告)号：US20190026181A1

公开(公告)日：2019-01-24

申请号：US15901175

申请日：2018-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Suk KIM ,  Sang-In PARK ,  IL-Han PARK ,  Sang-Yong YOON ,  Gyu-Seon RHIM ,  Sung-Woon CHOI

IPC: G06F11/10 ,  G11C29/52 ,  H03M13/37 ,  G11C16/28

Abstract: A method for controlling error check and correction (ECC) of a non-volatile memory device includes storing write data in a plurality of storing regions. The write data may be generated by performing ECC encoding. Individual ECC decoding may be performed based on each of a plurality of read data read out from the storing regions. Logic operation data may be provided by performing a logic operation of the read data when the individual ECC decoding fails with respect to all of the read data. Combined ECC decoding may be performed based on the logic operation data.